Complex Transistors

Rohm's production volume of Transistor is world's top class and transistor products had been getting refined by quickly complying with the market needs. This group of transistors are hybrid transistor with other device as combination listed below in ultra-small package type, small power type and so on, for the benefit of space saving and components reduction.

Complex MOSFETs[ MOSFET + MOSFET ]

Small Signal MOSFET


VMT6

EMT6
(SC-107C)

UMT6
(SC-88)
<SOT-363>

[unit:mm]

Drive
Voltage
(V)

ID
(A)

VDSS(V)

RoHS

20

Package

30

Package

50

Package

60

Package

0.9

0.2

-

-

-

-

EM6K34(N+N)
UM6K34N(N+N)

EMT6
UMT6

-

-

Yes

1.2

0.1

VT6J1(P+P)
VT6K1(N+N)
VT6M1(N+P)

VMT6
VMT6
VMT6

-

-

-

-

-

-

Yes

0.2

EM6J1(P+P)
EM6K7(N+N)
EM6M2(N+P)

EMT6
EMT6
EMT6

-

-

EM6K33(N+N)
UM6K33N(N+N)

EMT6
UMT6

-

-

Yes

1.8

0.3

EM6K6(N+N)

EMT6

-

-

-

-

-

-

Yes

2.5

0.25

-

-

-

-

-

-

EM6K31(N+N)
UM6K31N(N+N)

EMT6
UMT6

Yes

4

0.2

-

-

UM6J1N(P+P)

UMT6

-

-

-

-

Yes

(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.


Middle Power MOSFET

TUMT6

TSMT5

TSMT6
(SC-95)

TSMT8

TSST8

[unit:mm]

Drive
Voltage
(V)

ID
(A)

VDSS(V)

RoHS

0

Package

12

Package

20

Package

30

Package

45

Package

100

Package

1.5

1.3

-

-

US6J11(P+P)

TUMT6

-

-

-

-

-

-

-

-

Yes

1.5

-

-

-

-

US6M11(N+P)

TUMT6

-

-

-

-

-

-

Yes

2

-

-

QS6J11(P+P)
QS8J13(P+P)
US6J12(P+P)

TSMT6
TSMT8
TUMT6

-

-

-

-

-

-

-

-

Yes

2.5

-

-

TT8J13(P+P)

TSST8

TT8J21(P+P)
TT8K1(N+N)
TT8M1(N+P)
TT8M3(N+P)

TSST8
TSST8
TSST8
TSST8

-

-

-

-

-

-

Yes

3.5

-

-

QS8J11(P+P)
TT8J11(P+P)

TSMT8
TSST8

-

-

-

-

-

-

-

-

Yes

4

-

-

QS8J2(P+P)

TSMT8

-

-

-

-

-

-

-

-

Yes

4.5

-

-

QS8J12(P+P)

TSMT8

-

-

-

-

-

-

-

-

Yes

1.8

1.5

-

-

-

-

US6K4(N+N)

TUMT6

-

-

-

-

-

-

Yes

2.5

1

-

-

-

-

-

-

QS6K1(N+N)

TSMT6

QS6K21(N+N)

TSMT6

-

-

Yes

1.5

-

-

-

-

-

-

QS6M3(N+P)
QS6M4(N+P)
US6K1(N+N)
US6M2(N+P)

TSMT6
TSMT6
TUMT6
TUMT6

-

-

-

-

Yes

2

-

-

-

-

-

-

QS5K2(N+N)

TSMT5

-

-

-

-

Yes

2.5

-

-

-

-

-

-

TT8K2(N+N)

TSST8

-

-

-

-

Yes

3.5

-

-

-

-

-

-

QS8K2(N+N)

TSMT8

-

-

-

-

Yes

2.5/1.5

2.5

-

-

-

-

-

-

TT8M2(N+P)

TSST8

-

-

-

-

Yes

4

1.4

-

-

-

-

-

-

US6K2(N+N)
US6M1(N+P)

TUMT6
TUMT6

-

-

-

-

Yes

2

-

-

-

-

-

-

-

-

-

-

QS8K51(N+N)
QS8M51(N+P)

TSMT8
TSMT8

Yes

2.5

-

-

-

-

-

-

TT8J2(P+P)
TT8J3(P+P)

TSST8
TSST8

-

-

-

-

Yes

3

QS8M31(N+P)

TSMT8

-

-

-

-

TT8K11(N+N)
TT8M11(N+P)

TSST8
TSST8

-

-

-

-

Yes

3.5

-

-

-

-

-

-

QS8K11(N+N)
QS8M11A(N+P)

TSMT8
TSMT8

-

-

-

-

Yes

4

-

-

-

-

-

-

QS8J4(P+P)
QS8K12(N+N)
QS8M12(N+P)

TSMT8
TSMT8
TSMT8

QS8K21(N+N)

TSMT8

-

-

Yes

5

-

-

-

-

-

-

QS8J5(P+P)

TSMT8

-

-

-

-

Yes

6

-

-

-

-

-

-

QS8K13(N+N)
QS8M13(N+P)

TSMT8
TSMT8

-

-

-

-

Yes

(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.



Power MOSFET

SOP8

Drive
Voltage
(V)

ID
(A)

VDSS(V)

RoHS

30

Package

40

Package

45

Package

60

Package

80

Package

100

Package

250

Package

500

Package

4

3

-

-

-

-

-

-

-

-

-

-

SP8M51(N+P)

SOP8

-

-

-

-

Yes

3.4

-

-

-

-

-

-

-

-

SH8M41(N+P)

SOP8

-

-

-

-

-

-

Yes

3.5

SH8K11(N+N)
SH8M11(N+P)

SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

4

-

-

SH8K25(N+N)

SOP8

-

-

-

-

-

-

-

-

-

-

-

-

Yes

4.5

SH8J62(P+P)

SOP8

-

-

SH8K22(N+N)
SH8M24(N+P)

SOP8
SOP8

SH8J31(P+P)
SH8K32(N+N)

SOP8
SOP8

-

-

-

-

-

-

-

-

Yes

5.0

SH8K12(N+N)
SH8M12(N+P)

SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

6.0

SH8K13(N+N)
SH8M13(N+P)

SOP8
SOP8

SH8K26(N+N)

SOP8

-

-

-

-

-

-

-

-

-

-

-

-

Yes

7

SH8J65(P+P)
SH8K14(N+N)

SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

9

SH8J66(P+P)
SH8K15(N+N)
SH8M14(N+P)

SOP8
SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

10

0.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SP8K80(N+N)

SOP8

Yes

3

-

-

-

-

-

-

-

-

-

-

-

-

SH8M70(N+P)

SOP8

-

-

Yes

(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.



Complex MOSFETs[ MOSFET + Diode ] / [ Diode + MOSFET ]

TUMT5

 

TSMT5

 

WEMT6

 

TSST8

 

[unit:mm]

Drive
Voltage
(V)

ID
(A)

VDSS(V)

RoHS

12

Package

20

Package

30

Package

45

Package

1.5

1.5

-

-

ES6U2(N+SBD)

WEMT6

-

-

-

-

Yes

2.4

-

-

TT8U1(P+SBD)
TT8U2(P+SBD)

TSST8
TSST8

-

-

-

-

Yes

2.5

-

-

QS5U36(N+SBD)

TSMT5

-

-

-

-

Yes

1.8

1.3

ES6U1(P+SBD)

WEMT6

-

-

-

-

-

-

Yes

1.5

-

-

QS5U34(N+SBD)

TSMT5

-

-

-

-

Yes

 

 

2.5

1

-

-

ES6U42(P+SBD)
US5U30(P+SBD)
US5U38(P+SBD)

WEMT6
TUMT5
TUMT5

-

-

-

-

Yes

1.5

-

-

QS5U21(P+SBD)
QS5U23(P+SBD)
QS5U26(P+SBD)
QS5U27(P+SBD)
QS6U22(P+SBD)

TSMT5
TSMT5
TSMT5
TSMT5
TSMT6

ES6U41(N+SBD)
US5U1(N+SBD)
US5U3(N+SBD)
US6U37(N+SBD)

WEMT6
TUMT5
TUMT5
TUMT6

-

-

Yes

2

-

-

QS5U28(P+SBD)

TSMT5

QS5U12(N+SBD)
QS5U13(N+SBD)
QS5U16(N+SBD)
QS5U17(N+SBD)

TSMT5
TSMT5
TSMT5
TSMT5

-

-

Yes



4

0.7

-

-

-

-

-

-

US5U35(P+SBD)

TUMT5

Yes

1

-

-

-

-

QS6U24(P+SBD)

TSMT6

-

-

Yes

1.4

-

-

-

-

ES6U3(N+SBD)
US5U2(N+SBD)

WEMT6
TUMT5

-

-

Yes

2

-

-

-

-

QS5U33(P+SBD)

TSMT5

-

-

Yes

(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.



Complex Bipolar Transistors[ BIP TR + BIP TR ]


Configuration

Package

VMT6

EMT5
(SC-107BB)

EMT6
(SC-107C)

UMT5
(SC-88A)
<SOT-353>

UMT6
(SC-88)
<SOT-363>

SMT5
(SC-74A)

SMT6
(SC-74)
<SOT-457>

TUMT6

TSMT5

TSMT6
(SC-95)

VCEO
(V)

IC
(A)

hFE*2

RoHS

Application

PNP+PNP

Pre Amp.

VT6T2

-

-

-

-

-

-50

-0.1

120～560

Yes

-

EMT1

UMT1N

IMT1A

-

-

-50

-0.15

120～560

Yes

VT6T1

-

-

-

-

-

-20

-0.2

120～560

Yes

-

EMT18

UMT18N

IMT18

-

-

-12

-0.5

270～680

Yes

-

-

-

IMT17

-

-

-50

-0.5

120～390

Yes

-

-

-

IMT2A

-

-

-50

-0.15

120～560

Yes

-

EMT2

UMT2N

-

-

-

-50

-0.15

120～560

Yes

-

-

-

IMT4

-

-

-120

-0.05

180～820

Yes

-

-

-

IMT3A

-

-

-50

-0.15

120～560

Yes

-

EMT3

-

-

-

-

-50

-0.15

120～560

Yes

Driver

-

-

-

-

US6T9

QST9

-30

-1

270～680

Yes

-

-

-

-

US6T8

QST8

-12

-1.5

270～680

Yes

Suitable for current mirror circuit

VT6T12

-

-

-

-

-

-50

-0.1

120～560

Yes

VT6T11

-

-

-

-

-

-20

-0.2

120～560

Yes

NPN+NPN

Pre Amp.

VT6X2

-

-

-

-

-

50

0.1

120～560

Yes

-

EMX1

UMX1N

IMX1

-

-

50

0.15

120～560

Yes

-

EMX26

-

-

-

-

50

0.15

820～2700

Yes

VT6X1

-

-

-

-

-

20

0.2

120～560

Yes

-

-

-

IMX25

-

-

20

0.3

820～2700

Yes

-

EMX18

UMX18N

-

-

-

12

0.5

270～680

Yes

-

-

-

IMX9

-

-

20

0.5

560～2700

Yes

-

-

-

IMX17

-

-

50

0.5

120～390

Yes

-

-

-

IMX2

-

-

50

0.15

120～560

Yes

-

EMX2

UMX2N

-

-

-

50

0.15

120～560

Yes

-

-

-

IMX8

-

-

120

0.05

180～820

Yes

-

-

-

IMX3

-

-

50

0.15

120～560

Yes

-

EMX3

UMX3N

-

-

-

50

0.15

120～560

Yes

-

-

-

-

-

QS6Z5

50
-50

1
-1

180～450

Yes

High Frequency

-

-

-

IMX5

-

-

11

0.05

56～120

Yes

-

-

-

IMX4

-

-

20

0.05

56～180

Yes

-

-

UMX21N

-

-

-

6

0.05

180～560

Yes

-

EMX5

UMX5N

-

-

-

11

0.05

56～120

Yes

-

EMX4

UMX4N

-

-

-

20

0.05

56～180

Yes

Driver

-

-

-

-

US6X8

QSX8

30

1

270～680

Yes

-

-

-

-

US6X7

QSX7

12

1.5

270～680

Yes

Suitable for current mirror circuit

VT6X12

-

-

-

-

-

50

0.1

120～560

Yes

VT6X11

-

-

-

-

-

20

0.2

120～560

Yes

DC-DC Converter

-

-

-

-

-

QS5W2

50

3

180～450

Yes

-

-

-

-

-

QS5W1

30

3

200～500

Yes

NPN+PNP

Amplifier

-

-

-

FMY1A

-

-

-50
50

-0.15
0.15

120～560

Yes

-

EMY1

UMY1N

-

-

-

-50
50

-0.15
0.15

120～560

Yes

Inverter Driver

-

-

-

FMY4A

-

-

-50
50

-0.15
0.15

120～560

Yes

Pre Amp.

VT6Z2

-

-

-

-

-

-50
50

-0.1
0.1

120～560

Yes

VT6Z1

-

-

-

-

-

-20
20

-0.2
0.2

120～560

Yes

-

-

-

IMZ1A

-

-

50
-50

0.15
-0.15

120～560

Yes

-

-

-

IMZ4

-

-

32
-32

0.5
-0.5

180～390

Yes

-

EMZ1

UMZ1N

-

-

-

50
-50

0.15
-0.15

120～560

Yes

-

EMZ7

-

-

-

-

12
-12

0.5
-0.5

270～680

Yes

-

EMZ8

-

-

-

-

-12
50

-0.5
0.15

270～680

Yes

-

-

-

IMZ2A

-

-

-50
50

-0.15
0.15

120～560

Yes

-

EMZ2

UMZ2N

-

-

-

-50
50

-0.15
0.15

120～560

Yes

DC-DC Converter

-

-

-

-

-

QSZ2

-30
30

-1.5
1.5

270～680

Yes

-

-

-

-

-

QSZ1

-12
12

-2
2

270～680

Yes

-

-

-

-

-

QSZ4

-30
30

-2
2

270～680

Yes

-

-

-

-

-

QSZ3

-12
12

-3
3

270～680

Yes

-

-

-

-

-

QS5Y1

-30
30

-3
3

200～500

Yes

-

-

-

-

-

QS5Y2

-50
50

-3
3

180～450

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.



Complex Bipolar Transistors[ MOSFET ＋ BIP TR ] ／ [ BIP TR ＋ MOSFET ]


Configuration

Package

EMT6
(SC-107C)

UMT6
(SC-88)
<SOT-363>

TSMT8

VCEO
(V)

IC
(A)

hFE*2

RoHS

Application

 

 

 

BIP_PNP+MOS_Nch

Power Manegement

EMF6

UMF6N

-

-12
30

-0.5

270～680

Yes

BIP_NPN+MOS_Nch

Power Manegement

EMF9

UMF9N

-

12
30

0.5

270～680

Yes

BIP_PNP+MOS_Pch

Load switch
Switching

-

-

QS8F2

-30
-12

-2

270～680

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.


Complex Bipolar Transistors[ BIP TR ＋ DTR ] ／ [ DTR ＋ BIP TR ]


Configuration

Package

EMT6
(SC-107C)

UMT6
(SC-88)
<SOT-363>

VCEO
(V)

IC
(A)

hFE*2

RoHS

Application

 

 

BIP_PNP+DTR_NPN

Power Manegement

-

UMF28N

-50
50

-0.15

180～390

Yes

EMF5

UMF5N

-12
50

-0.5

270～680

Yes

BIP_NPN+DTR_NPN

Power Manegement

EMF8

UMF8N

12
50

0.5

270～680

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.


Complex Bipolar Transistors[ BIP TR + Diode ] / [ Diode + BIP TR ]


Configuration

Package

EMT6
(SC-107C)

UMT5
(SC-88A)
<SOT-353>

UMT6
(SC-88)
<SOT-363>

SMT5
(SC-74A)

TUMT5

TSMT5

VCEO
(V)

IC
(A)

hFE*2

RoHS

Application

 

 

 

 

 

BIP_PNP+Di

DC-DC Converter

-

UML1N

-

-

-

-50

-0.15

120～560

Yes

-

UML4N

-

-

-

-12

-0.5

270～680

Yes

-

-

FML9

-

-

-12

-1.5

270～680

Yes

-

-

-

-

QSL11

-30

-1

270～680

Yes

-

-

-

US5L9

QSL9

-12

-1.5

270～680

Yes

BIP_NPN+Di

DC-DC Converter

-

UML2N

-

-

-

50

0.15

120～560

Yes

-

UML6N

-

-

-

12

0.5

270～680

Yes

-

-

FML10

-

-

12

1.5

270～680

Yes

-

-

-

US5L12

QSL12

30

1

270～680

Yes

-

-

-

US5L10

QSL10

12

1.5

270～680

Yes

Shunt Regulator

EML22

UML23N

-

-

-

50
Vz
6.8

0.15
Iz
5

120～270

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.


Complex Bipolar Transistors[ MOSFET + DTR ] / [ DTR + MOSFET ]


Configuration

Package

EMT6
(SC-107C)

UMT6
(SC-88)
<SOT-363>

VCEO
(V)

IC
(A)

hFE*2

RoHS

Application

 

 

DTR_PNP+MOS_Nch

Power Manegement

EMF32

UMF32N

-50
30

-0.1

100～600

Yes

EMF33

-

-12
30

-0.5

140～

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.


Complex Bipolar Transistors[ DTR + Diode ] / [ Diode + DTR ]


Configuration

Package

EMT5
(SC-107BB)

EMT6
(SC-107C)

VCEO
(V)

IC
(A)

hFE*2

RoHS

Application

 

DTR_PNP+Di

DC-DC Converter

EML17

-50
30

0.1

68～

Yes

DTR_NPN+Di

DC-DC Converter

EML20

50
30

0.1

80～

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.


Complex Digital Transistors[ DTR + DTR ] / [ DTR + DTR ]

Configuration

Package

EMT5
(SC-107BB)

EMT6
(SC-107C)

UMT5
(SC-88A)
<SOT-353>

UMT6
(SC-88)
<SOT-363>

SMT5
(SC-74A)

SMT6
(SC-74)
<SOT-457>

TUMT6

TSMT6
(SC-95)

Eqivalent
element
transistors

VCC
(VCEO)
(V)

IO
(IC)
(A)

GI
(hFE)

RoHS

Application

 

 

 

 

 

Upper row: Tr1
The lower: Tr2

PNP+PNP

Potentional divider type

-

UMA9N

-

-

-

DTA114E×2

-50

-0.1

30～
-

Yes

-

UMA1N

-

-

-

DTA124E×2

-50

-0.1

56～
-

Yes

EMA2

UMA2N

-

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Leak asorption type

EMA5

UMA5N

-

-

-

DTA123J×2

-50

-0.1

80～
-

Yes

Potentional divider type

-

-

FMA9A

-

-

DTA114E×2

-50

-0.1

30～
-

Yes

-

-

FMA1A

-

-

DTA124E×2

-50

-0.1

56～
-

Yes

-

-

FMA2A

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Leak asorption type

-

-

FMA5A

-

-

DTA123J×2

-50

-0.1

80～
-

Yes

Input resistor type

EMA4

UMA4N

-

-

-

DTA114T×2

-50

-0.1

100～600
-

Yes

EMA3

UMA3N

-

-

-

DTA143T×2

-50

-0.1

100～600
-

Yes

Input resistor type

-

-

FMA4A

-

-

DTA114T×2

-50

-0.1

100～600
-

Yes

-

-

FMA3A

-

-

DTA143T×2

-50

-0.1

100～600
-

Yes

Potentional divider type

EMB11

UMB11N

IMB11A

-

-

DTA114E×2

-50

-0.1

30～
-

Yes

EMB2

UMB2N

IMB2A

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Leak asorption type

EMB10

UMB10N

IMB10A

-

-

DTA123J×2

-50

-0.1

80～
-

Yes

Potentional divider type

EMB6

UMB6N

-

-

-

DTA144E×2

-50

-0.1

68～
-

Yes

Input resistor type

EMB4

-

-

-

-

DTA114T×2

-50

-0.1

100～600
-

Yes

EMB3

UMB3N

IMB3A

-

-

DTA143T×2

-50

-0.1

100～600
-

Yes

NPN+NPN

Potentional divider type

EMG9

UMG9N

-

-

-

DTC114E×2

50

0.1

30～
-

Yes

EMG5

UMG5N

-

-

-

DTC114Y×2

50

0.1

68～
-

Yes

EMG11

UMG11N

-

-

-

DTC123J×2

50

0.1

80～
-

Yes

EMG1

UMG1N

-

-

-

DTC124E×2

50

0.1

56～
-

Yes

EMG8

UMG8N

-

-

-

DTC143Z×2

50

0.1

80～
-

Yes

EMG2

UMG2N

-

-

-

DTC144E×2

50

0.1

68～
-

Yes

Potentional divider type

-

-

FMG9A

-

-

DTC114E×2

50

0.1

30～
-

Yes

-

-

FMG1A

-

-

DTC124E×2

50

0.1

56～
-

Yes

-

-

FMG2A

-

-

DTC144E×2

50

0.1

68～
-

Yes

Input resistor type

EMG4

UMG4N

-

-

-

DTC114T×2

50

0.1

100～600
-

Yes

EMG3

UMG3N

-

-

-

DTC143T×2

50

0.1

100～600
-

Yes

EMG6

UMG6N

-

-

-

DTC144T×2

50

0.1

100～600
-

Yes

Input resistor type

-

-

FMG4A

-

-

DTC114T×2

50

0.1

100～600
-

Yes

-

-

FMG3A

-

-

DTC143T×2

50

0.1

100～600
-

Yes

-

-

FMG6A

-

-

DTC144T×2

50

0.1

100～600
-

Yes

Potentional divider type

EMH11

UMH11N

IMH11A

-

-

DTC114E×2

50

0.1

30～
-

Yes

EMH1

UMH1N

IMH1A

-

-

DTC124E×2

50

0.1

56～
-

Yes

EMH25

-

-

-

-

DTC143Z×2

50

0.1

80～
-

Yes

EMH2

UMH2N

IMH2A

-

-

DTC144E×2

50

0.1

68～
-

Yes

Leak asorption type

EMH9

UMH9N

IMH9A

-

-

DTC114Y×2

50

0.1

68～
-

Yes

EMH10

UMH10N

-

-

-

DTC123J×2

50

0.1

80～
-

Yes

Potentional divider type

-

UMH5N

-

-

-

DTC124E×2

50

0.1

56～
-

Yes

EMH6

UMH6N

-

-

-

DTC144E×2

50

0.1

68～
-

Yes

Potentional divider type

-

-

IMH5A

-

-

DTC124E×2

50

0.1

56～
-

Yes

-

-

IMH6A

-

-

DTC144E×2

50

0.1

68～
-

Yes

Input resistor type

EMH4

UMH4N

IMH4A

-

-

DTC114T×2

50

0.1

100～600
-

Yes

EMH3

UMH3N

IMH3A

-

-

DTC143T×2

50

0.1

100～600
-

Yes

EMH15

-

IMH15A

-

-

DTC144T×2

50

0.1

100～600
-

Yes

-

-

IMH21

-

-

DTC614T×2

20

0.6

820～2700
-

Yes

-

-

IMH23

US6H23

-

DTC643T×2

20

0.6

820～2700
-

Yes

Input resistor type

-

UMH8N

-

-

-

DTC114T×2

50

0.1

100～600
-

Yes

-

UMH14N

-

-

-

DTC144T×2

50

0.1

100～600
-

Yes

Input resistor type

-

-

IMH8A

-

-

DTC114T×2

50

0.1

100～600
-

Yes

-

-

IMH14A

-

-

DTC144T×2

50

0.1

100～600
-

Yes

Input resistor type

-

-

-

-

QSH29

DTDG14GP×2

60±10

0.5

500～
-

Yes

PNP+NPN

Potentional divider type

EMD3

UMD3N

-

-

-

DTA114E×DTC114E

50
-50

0.1
-0.1

30～
30～

Yes

EMD2

UMD2N

-

-

-

DTA124E×DTC124E

50

0.1

56～
-

Yes

EMD12

UMD12N

-

-

-

DTA144E×DTC144E

50
-50

0.1
-0.1

68～
68～

Yes

Leak asorption type

EMD38

-

-

-

-

DTA113Z×DTC114Y

50
-50

0.1
-0.1

68～
33～

Yes

EMD9

UMD9N

-

-

-

DTA114Y×DTC114Y

50
-50

0.1
-0.1

68～
68～

Yes

EMD4

UMD4N

-

-

-

DTA114Y×DTC144E

50
-50

0.1
-0.1

68～
68～

Yes

EMD5

UMD5N

-

-

-

DTA143X×DTC144E

50
-50

0.1
-0.1

68～
30～

Yes

EMD22

UMD22N

-

-

-

DTA143Z×DTC143Z

50
-50

0.1
-0.1

80～
80～

Yes

Potentional divider type

-

-

IMD3A

-

-

DTA114E×DTC114E

50
-50

0.1
-0.1

30～
30～

Yes

-

-

IMD2A

-

-

DTA124E×DTC124E

50
-50

0.1
-0.1

56～
56～

Yes

Leak asorption type

-

-

IMD90A

-

-

DTA114Y×DTC114Y

50
-50

0.1
-0.1

68～
68～

Yes

Input resistor type

EMD6

UMD6N

-

-

-

DTA143T×DTC143T

50
-50

0.1
-0.1

100～600
～600

Yes

Input resistor type

-

-

IMD6A

-

-

DTA143T×DTC143T

50
-50

0.1
-0.1

100～600
～600

Yes

Power management

EMD29

-

-

-

-

DTB513Z×DTC114E

-12
50

-0.5
0.1

140～
30～

Yes

EMD30

-

-

-

-

DTB713Z×DTC114E

-30
50

0.2
0.1

140～
30～

Yes

Power management

-

-

IMD10A

-

-

- ×DTC114T

-50
50

-0.5
0.1

68～
～600

Yes

-

-

IMD16A

-

-

- ×DTC115T

-50
50

-0.5
0.1

82～
～600

Yes

* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.